small signal transistor arrays 1 publication date: march 2004 sjk00046bed una0222 (UN222) silicon pnp epitaxial planar type (3 elements) silicon npn epitaxial planar type (3 elements) for motor drives features ? small and lightweight ? low power consumption (low v ce(sat) transistor used) ? low voltage drive ? transistors with built-in resistor with 6 elements incorporated absolute maximum ratings t a = 25 c marking symbol: UN222 internal connection unit: mm 1: collector 5: collector 9: base 13: base 2: base 6: base 10: collector 14: emitter 3: collector 7: emitter 11: base 4: base 8: collector 12: collector so14-g1 package note) * : when the dissipation on one device is t c = 25 c 0.8 12 0.5 0.2 +0.1 ?0.0 45 0.4 0.1 6.5 0.3 5.5 0.3 7.7 0.3 1.5 0.1 1.5 +0.2 ?0.1 8 9 10 11 12 13 14 1 4567 23 12 0.5 0.2 0.9 0.1 14 13 12 11 10 9 8 1 2 3 4 5 6 7 parameter symbol rating unit pnp collector-base voltage v cbo ? 10 v (emitter open) collector-emitter voltage v ceo ? 10 v (base open) collector current i c ? 3a peak collector current i cp ? 4a npn collector-base voltage v cbo 10 v (emitter open) collector-emitter voltage v ceo 10 v (base open) collector current i c 3a peak collector current i cp 4a overall total power dissipation * p t 0.5 w junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c note) the part number in the parenthesis shows conventional part number.
una0222 2 sjk00046bed electrical characteristics t a = 25 c 3 c ? pnp ? npn parameter symbol conditions min typ max unit collector-base voltage (emitter open) v cbo i c = ? 10 a, i e = 0 ? 10 v collector-emitter voltage (base open) v ceo i c = ? 1 ma, i b = 0 ? 10 v collector-base cutoff current (emitter open) i cbo v cb = ? 6 v, i e = 0 ? 1 a forward current transfer ratio h fe v ce = ? 1 v, i c = ? 0.5 a 200 700 ? collector-emitter saturation voltage v ce(sat) i c = ? 2 a, i b = ? 50 ma ? 0.45 v transition frequency f t v cb = ? 6 v, i e = 50 ma, f = 200 mhz 150 mhz collector output capacitance c ob v cb = ? 6 v, i e = 0, f = 1 mhz 70 pf (common base, input open circuited) forward voltage * 1 v f i f = ? 1 a ? 1.5 v bias resistance * 2 r eb ? 30% 10 + 30% k ? parameter symbol conditions min typ max unit collector-base voltage (emitter open) v cbo i c = 10 a, i e = 010v collector-emitter voltage (base open) v ceo i c = 1 ma, i b = 010v collector-base cutoff current (emitter open) i cbo v cb = 6 v, i e = 01 a forward current transfer ratio h fe v ce = 1 v, i c = 0.5 a 200 700 ? collector-emitter saturation voltage v ce(sat) i c = 2 a, i b = 50 ma 0.25 v transition frequency f t v cb = 6 v, i e = ? 50 ma, f = 200 mhz 150 mhz collector output capacitance c ob v cb = 6 v, i e = 0, f = 1 mhz 50 pf (common base, input open circuited) forward voltage * 1 v f i f = 1 a 1.5 v bias resistance * 2 r eb ? 30% 10 + 30% k ? note) 1. measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. 2. * 1: application to the built-in diode * 2: application to the built-in resistance
una0222 3 sjk00046bed characteristics charts of pnp transistor block i c ? v ce v ce(sat) ? i c h fe ? i c c ob ? v cb ? 2 0 ? 4 ? 6 ? 8 ? 10 ? 12 0 ? 1 ? 2 ? 3 ? 4 ? 5 ? 6 t a = 25 c ? 10 ma ? 8 ma ? 6 ma ? 2 ma ? 4 ma i b = ? 12 ma collector current i c ( a ) collector-emitter voltage v ce ( v ) ? 0.01 ? 0.1 ? 1 ? 10 ? 10 ? 3 ? 10 i c / i b = 40 ? 10 ? 2 ? 10 ? 1 ? 1 t a = 75 c 25 c ? 25 c collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( a ) 0 100 200 300 400 500 600 v ce = ? 1 v ? 0.01 ? 0.1 ? 1 ? 10 25 c ? 25 c t a = 75 c forward current transfer ratio h fe collector current i c ( a ) ? 1 ? 10 ? 100 0 240 120 40 80 160 200 f = 1 mhz i e = 0 t a = 25 c collector output capacitance (common base, input open circuited) c ob (pf) collector-base voltage v cb ( v ) common characteristics chart p t ? t a 0 40 80 120 160 0 0.1 0.2 0.3 0.4 0.5 0.6 total power dissipation p t ( w ) ambient temperature t a ( c )
una0222 4 sjk00046bed characteristics charts of npn transistor block i c ? v ce v ce(sat) ? i c h fe ? i c c ob ? v cb 2 0 4 6 8 10 12 0 1 2 3 4 5 6 t a = 25 c 10 ma 8 ma 6 ma 2 ma 4 ma i b = 12 ma collector current i c ( a ) collector-emitter voltage v ce ( v ) 10 ? 3 10 i c / i b = 40 10 ? 2 10 ? 1 1 0.01 0.1 1 10 t a = 75 c 25 c ? 25 c collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( a ) 0 100 200 300 400 500 600 v ce = 1 v 0.01 0.1 1 10 25 c ? 25 c t a = 75 c forward current transfer ratio h fe collector current i c ( a ) 1 10 100 0 240 120 40 80 160 200 f = 1 mhz i e = 0 t a = 25 c collector output capacitance (common base, input open circuited) c ob (pf) collector-base voltage v cb ( v )
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